inchange semiconductor isc product specification isc silicon pnp power transistor BD722 description dc current gain- : h fe = 40@ i c = -0.5a collector-emitter breakdown voltage - : v (br)ceo = -80v(min) complement to type bd721 applications designed for use in audio output and general purpose amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -80 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current-continuous -4 a i cm collector current-peak -7 a i b b base current-continuous -1 a p c collector power dissipation @ t c =25 30 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 3.5 /w r th j-a thermal resistance,junction to ambient 100 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BD722 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -30ma ; i b = 0 -80 v v ce( sat ) collector-emitter saturation voltage i c = -2a; i b = -0.2a b -1.0 v v be( on ) base-emitter on voltage i c = -2a; v ce = -4v -1.4 v v cb = -80v; i e = 0 -50 a i cbo collector cutoff current v cb = -40v; i e = 0; t c = 150 -1 ma i ceo collector cutoff current v ce = -40v; i b = 0 b -0.1 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -0.2 ma h fe-1 dc current gain i c = -0.5a; v ce = -4v 40 h fe-2 dc current gain i c = -2a; v ce = -4v 20 f t current-gain?bandwidth product i c = -0.5a; v ce = -4v 3 mhz switching times t on turn-on time 0.1 s t off turn-off time i c = -1a; i b1 = -i b2 = -0.1a; v cc = -20v 0.4 s isc website www.iscsemi.cn 2
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